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A new prediction method for ReRAM data retention statistics based on 3D filament structures

机译:基于3D灯丝结构的RERAM数据保留统计数据的一种新预测方法

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Instead of wide distributed resistance for a single bit, we introduce non-fluctuating physical parameters, filament diameter and packing factor (corresponding to oxygen vacancy concentration) to describe ReRAM bit. The quantitative 3D percolation model is developed based on direct observation of the filament structure and hopping conduction, which is confirmed with ultra-low temperature (30 K) measurement. Moreover, we provide a simulation method to obtain quantitative filament diameter, packing factor and to do the prediction of the resistance distribution after retention, which is verified with experiment.
机译:为单个比特而不是宽的分布性电阻,我们引入非波动的物理参数,丝直径和填充因子(对应于氧空位浓度)来描述焦型位。基于直接观察细丝结构和跳跃传导,开发了定量的3D渗透模型,其通过超低温度(30k)测量来确认。此外,我们提供了一种仿真方法,以获得定量丝直径,包装因子,并在保持后进行电阻分布的预测,这是用实验验证的。

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