2010 IEEE international reliability physics symposium

摘要

The following topics are dealt with: pMOSFET, high electron mobility transistors, and heterojunction bipolar transistors; optoelectronics thin films; light emitting diodes; phase change memory devices; dielectric breakdown; magnetic tunnel junction; electromigration; package design; radiation-induced pulse noise; CMOS technology; circuit reliability; industrial fault injection platform; thyristor-based memory cell; flash memory; failure analysis; single metal dual dielectric gate stacks; nanoelectronics; power devices; interconnect electro- and stress-migration; interconnect low-k; high-k gate dielectric; stress-induced leakage current; transistor hot carriers; micromechanical devices; electrostatic discharge; charge trapping NAND flash devices; and other thin film devices.