Dopant Segregated Schottky (DSS) Source/Drain for Germanium p-MOSFETs with Metal Gate/High-k Dielectric Stack

摘要

Dopant Segregated Schottky (DSS) Source/Drain (S/D) for Germanium p-MOSFETs with Metal Gate/High-k Dielectric Stack are demonstrated for the first time. The MOSFETs were fabricated using a CMOS-compatible process flow and 200 mm Ge-on-Si substrates. Dopant segregation induced by nickel germanide formation in the S/D was achieved using low process temperatures up to 400 °C.