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Germanium MOSFETs with high-K gate dielectric and advanced source/drain structure

机译：具有高K栅极电介质和先进的源/漏结构的锗MOSFET

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ZHANG QINGCHUN;
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年度 2007
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1. A threshold voltage analytical model for high-k gate dielectric MOSFETs with fully overlapped lightly doped drain structures [J] . Ma Fei, Liu Hong-Xia, Kuang Qian-Wei, 中国物理：英文版 . 2012,第005期

机译：具有完全重叠的轻掺杂漏极结构的高k栅极介电MOSFET的阈值电压分析模型
2. The impact of high-k gate dielectric and FIBL on performance of nano DG-MOSFETs with underlapped source/drain regions [J] . Morteza Charmi, Hamid R. Mashayekhi, Ali A. Orouji Journal of Computational Electronics . 2014,第1期

机译：高k栅极电介质和FIBL对源/漏区重叠的纳米DG-MOSFET性能的影响
3. An Air Spacer Technology for Improving Short-Channel Immunity of MOSFETs With Raised Source/Drain and High-k Gate Dielectric [J] . Chunshan Yin, Philip C. H. Chan, Mansun Chan IEEE Electron Device Letters . 2005,第5期

机译：空气隔离器技术可通过提高源极/漏极和高k栅极电介质来提高MOSFET的短沟道抗扰度
4. Dopant Segregated Schottky (DSS) Source/Drain for Germanium p-MOSFETs with Metal Gate/High-k Dielectric Stack [C] . Phyllis Shi Ya Lira, Dong Zhi Chi, Guo Qiang Lo, Symposium on ULSI process integration;Meeting of the Electrochemical Society . 2009

机译：具有金属栅极/高k介电层的锗p-MOSFET的掺杂隔离肖特基（DSS）源极/漏极
5. Gate Last Indium-Gallium-Arsenide MOSFETs with Regrown Source-Drain Regions and ALD Dielectrics. [D] . Carter, Andrew Daniel. 2013

机译：具有再生源极-漏极区和ALD介电层的最后栅极铟镓砷MOSFET。
6. High-performance III-V MOSFET with nano-stacked high-k gate dielectric and 3D fin-shaped structure [O] . Szu-Hung Chen, Wen-Shiang Liao, Hsin-Chia Yang, 2012

机译：具有纳米堆叠的高k栅极电介质和3D鳍形结构的高性能III-V MOSFET
7. Design, fabrication, and characterization of germanium MOSFETs with high-k gate dielectric stacks based on the nitride interfacial layers [O] . Ritenour Andrew P. (Andrew Paul) 1974- 2007

机译：基于氮化物界面层的具有高k栅极电介质叠层的锗mOsFET的设计，制造和表征

Germanium MOSFETs with high-K gate dielectric and advanced source/drain structure

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