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Atomic Layer Deposition for All-Solid-State 3D-Integrated Batteries

机译:全固态3D集成电池的原子层沉积

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All-solid-state 3D integrated batteries can reach the energy storage capacity required for future wireless devices by exploiting the third dimension. Conformal deposition techniques such as atomic layer deposition (ALD) are needed to deposit the battery materials. In this work, the current development of ALD processes for 3D integrated batteries is reviewed. We have developed both the TiN diffusion barrier and Pt cathode current collector processes. TiN showed good barrier properties in 3D, although a higher than expected charge density was observed, which could be attributed to a lower thickness and/or different material properties at the bottom of the 3D structures. The remote plasma ALD process for Pt showed fast growth initiation and good adhesion of the films. Furthermore, sufficient step coverage for the battery application was found. ALD is also potentially able to deposit the active battery layers, although the deposition of Li-containing materials is expected to be challenging.
机译:通过利用三维,全固态3D集成电池可以达到未来无线设备所需的能量存储容量。需要保形沉积技术,例如原子层沉积(ALD),以沉积电池材料。在这项工作中,对用于3D集成电池的ALD工艺的当前发展进行了回顾。我们已经开发了TiN扩散势垒和Pt阴极集电器工艺。 TiN在3D中显示出良好的势垒性能,尽管观察到的电荷密度高于预期,这可能归因于3D结构底部的较低厚度和/或不同的材料性能。 Pt的远程等离子体ALD工艺显示出快速的生长起始和良好的薄膜附着力。此外,找到了用于电池应用的足够的阶梯覆盖率。尽管预计含锂材料的沉积将具有挑战性,但ALD也有可能沉积活性电池层。

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