Growth of thick AlN layers by High Temperature CVD (HTCVD)

摘要

To achieve AlN bulk growth, HTCVD chlorinated process is investigated. High growth rate and high crystalline quality are targeted for AlN films grown on (0001) α-Al_2O_3 and (0001) 4H or 6H SiC substrates between 1100 °C and 1750 °C. The precursors used are ammonia NH_3 and aluminium chlorides AlCl_x species formed in situ by action of Cl_2 on high purity Al wire. Both influences of temperature and carrier gas on microstructure, crystalline state and growth rate are presented. Growth rates higher than 190 μm.h~(-1) have been reached. Thermodynamic calculations were carried out to understand the chemistry of AlN deposition. AN layers were characterized by SEM and θ/2θ X-Ray Diffraction. Their epitaxial relationships with substrates were deduced from pole figures obtained by X-Ray diffraction on a texture goniometer.