A 13 kV 4H-SiC n-channel IGBT with Low R_(diff,on) and Fast Switching

摘要

For the first time, high power 4H-SiC n-IGBTs have been demonstrated with 13 kV blocking and a low R_(diff,on) of 22 mΩcm~2 which surpasses the 4H-SiC material limit for unipolar devices. Normally-off operation and >10 kV blocking is maintained up to 200°C base plate temperature. The on-state resistance has a slight positive temperature coefficient which makes the n-IGBT attractive for parallel configurations. MOS characterization reveals a low net positive fixed charge density in the oxide and a low interface trap density near the conduction band which produces a 3 V threshold and a peak channel mobility of 18 cm~2/Vs in the lateral MOSFET test structure. Finally, encouraging device yields of 64% in the on-state and 27% in the blocking indicate that the 4H-SiC n-IGBT may eventually become a viable power device technology.