Effect of Recombination-Induced Stacking Faults on Majority Carrier Conduction and Reverse Leakage Current on 10 kV SiC DMOSFETs

摘要

This paper presents the effect of recombination-induced stacking faults on the drift based forward conduction and leakage currents of high voltage 4H-SiC power devices. To show the effects, IV characteristics of a 4H-SiC 10 kV DMOSFET and a 4H-SiC 4 kV BJT have been evaluated before and after the induction of stacking faults in the drift epilayer. For both devices, significant increases in forward voltage drops, as well as marked increases in leakage currents have been observed. The results suggest that injection of minority carriers in majority carrier devices should be avoided at all times.