Normally-off 4H-SiC Power MOSFET with Submicron Gate

摘要

In order for SiC-MOSFET to be practical in various power electronics applications, low specific on-resistance R_(on,sp), high breakdown voltage and "normally-off characteristics have to be fulfilled even at high temperature. We fabricated a SiC-MOSFET employing a submicron gate with channel length L_g of 0.5μm by a self-aligned implantation and a8-doped epitaxial channel layer to successfully demonstrate the following features. The normally-off characteristics was confirmed from room temperature to 200°C where the therethold voltages V_(th) were 2.9V at room temperature and 1.6V at 200°C, respectively. The R_(on,sp) were 4.6mΩcm~2 at room temperature and 9.2mΩcm~2 at 200°C, respectively, while the breakdown voltage was greater than 1400V .