Influence of Passivation Oxide Properties on SiC Field-plated Buried Gate MESFETs

摘要

Silicon Carbide MESFETs for microwave frequencies were made using a field-plated buried gate approach. The devices were fabricated using passivation oxides with different interface trap densities. By using a passivation oxide with a reduced interface trap density, grown in a sodium containing ambient, it was possible to achieve a very high continous wave output power density of the device: 8 W/mm at 3 GHz and 1 dB compression.