Effect of the doping concentration and space of both p-grid and field limiting ring on 4H-SiC Junction Barrier Schottky diode with single ion implantation process

摘要

The effect of the doping concentration and space of both p-grid and FLR on the electrical performances of 4H-SiC JBS diode has been investigated. A 4H-SiC JBS diode with the p-grid space of 3um, the FLR space of 3um, and the doping concentration of 5E18cm~(-3) showed the highest blocking voltage of 1500V.