A modified TPP test structure for determining the specific contact resistance of the screen-printed Ag-metal contact of the silicon solar cell

摘要

A revised version of the contact resistance test structure based on the three-point probe method has been designed to determine the specific contact resistance, ¿_c (¿ cm²) of the screen-printed Ag metallization on the top of the porous silicon surface of the solar cell. The contact structure consists of printed Ag metal contact on the top of the porous silicon surface and an aluminum/silver (Al/Ag) contact at the back surface which was realized by screen-printed metallization process. The three-point probe (TPP) method was used to determine the specific contact resistance measurement shows that a much reliable value of ¿_c = 1.15×10^-6 ¿-cm² is estimated for the contact structure. This value of ¿_c is two or more orders of magnitude lower than the corresponding specific contact resistance data previously reported for the Ag metallization on the porous silicon/p-Si heterostructure.