We develop a back contact monocrystalline thin-film silicon solar cell using the porous silicon process. Laser processes are applied for all structuring steps. Thus no photolithography or other masking techniques are required. A single evaporation step is used to metallize the cell. Laser scribing is used for contact separation. The cell has a planar front surface, an area of 79.2 cm2 and a cell thickness of 30 ÃÂÿm. We reach an efficiency of 13.5 %. The open-circuit voltage is 633 mV and the short-circuit current density is 28.7 mA/cm2.
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机译：我们使用多孔硅工艺开发了背接触单晶薄膜硅太阳能电池。激光加工适用于所有结构化步骤。因此，不需要光刻或其他掩膜技术。单个蒸发步骤用于金属化电池。激光划刻用于触点分离。该单元具有一个平面的前表面，面积为79.2 cm 2 ，单元厚度为30μm。我们达到了13.5％的效率。开路电压为633 mV，短路电流密度为28.7 mA / cm 2 。
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