A Novel 0.15-μm High-Aspect-Ratio T-shaped Gate Fabrication Process Using a 248nm DUV Stepper

摘要

A 0.15μm GaAs-based PHEMT process on 100ram wafers using 248nm stepper based technology for millimeter wave applications is developed.This process shows improved throughput and yield compared to traditional E-beam lithography based process. 0.15pro PHEMTs with high-aspect-ratio (≈4.5) gates are successfully fabricated using this process,exhibiting a good millimeter-wave performance with a fT of 82.7GHz and a power gain greater than 15dB at 12GHz.