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Crystal growth of ZnO films on glass substrate by MOCVD with two buffer layers of SiO2 and ZnO

机译：通过具有两个SiO2和ZnO缓冲层的MOCVD在玻璃基板上生长ZnO膜的晶体

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《2008 IEEE纳米电子学国际会议暨上海纳光电论坛(2nd IEEE International Nanoelectronics Conference Shanghai Nanophotonics and Electronics Forum)论文集》|2008年||共2页
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1. Effect of crystallinity of ZnO buffer layer on the properties of epitaxial (ZnO:Al)/(ZnO:Ga) bi-layer films deposited on c-sapphire substrate [J] . Zhiyun Zhang, Chonggao Bao, Shengqiang Ma, Applied Surface Science . 2011,第17期

机译：ZnO缓冲层的结晶度对沉积在c-蓝宝石衬底上的外延（ZnO：Al）/（ZnO：Ga）双层薄膜性能的影响
2. MOCVD growth of ZnO films on Si(111) substrate using a thin AlN buffer layer [J] . L. Wang, Y. Pu, Y.F. Chen, Journal of Crystal Growth . 2005,第3a4期

机译：使用薄AlN缓冲层在Si（111）衬底上MOCVD生长ZnO膜
3. Effect of the initial thin Ti buffer layers on the quality of ZnO thin films grown on Si(111) substrates by MOCVD [J] . Li F, Li DM, Dai JN, Superlattices and microstructures . 2006,第1期

机译：初始薄Ti缓冲层对通过MOCVD在Si（111）衬底上生长的ZnO薄膜质量的影响
4. Annealing effects of ZnO films deposited on (0001) A1_2O_3 and (111) Si substrate by RF sputtering and GaN layer grown on ZnO films used as buffer layer by MOCVD [C] . S.-R. Jeon, M.-A. Yu, S. K. Shim, International conference on nitride semiconductors . 2003

机译：ZnO膜在（0001）A1_2O_3和（111）Si衬底上沉积的ZnO膜通过MOCVD用作缓冲层的ZnO薄膜生长的GaN层
5. Semi-transparent zinc oxide:aluminum/copper(I) oxide thin-film heterojunction fabricated at low temperature: Effect of an intrinsic ZnO buffer layer at the junction [D] . Huang, Yu-Nung 2011

机译：半透明氧化锌：低温制备的铝/铜（I）氧化物薄膜异质结：结处本征ZnO缓冲层的作用
6. Hydrothermal Growth and Application of ZnO Nanowire Films with ZnO and TiO2Buffer Layers in Dye-Sensitized Solar Cells [O] . Weiguang Yang, Farong Wan, Siwei Chen, 2009

机译：染料敏化太阳能电池中具有ZnO和TiO2缓冲层的ZnO纳米线薄膜的水热生长及其应用
7. Effects of the Gas Atmosphere of ZnO Buffer Layers in the ZnO films grown on Si Substrates by RF Magnetron Sputtering [O] . 2005

机译：通过RF磁控溅射在Si基板上生长的ZnO缓冲层气体气氛的影响

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