Characterization of radio frequency sputtered Si_xGe_(1-x)O_y thin films for uncooled micro-bolometer

摘要

Thin film Si_xGe_(1-x)O_y were deposited on glass, silicon and SiO_2 by RF magnetron sputtering using co-sputtering of silicon and germanium targets in an environment of oxygen and argon. Silicon percentage was varied from ～7% to 22%. Exact contents of each material were determined by XRD/EDS and electrical properties of amorphous compound were studied. High values of temperature coefficient of resistance were obtained in specific conditions. the highest achieved TCR at room temperature was (5.8%/K) using Si_(0.177)Ge_(0.726)O_(0.097) (film deposited at 400 °C). The measured resistivity on this sample was 14.6 Ω cm.