Laser annealing of implanted Silicon Carbide and Raman Characterization

摘要

Pulsed-laser-based methods have been applied for post-implant annealing of p-type Al doped 4H-SiC wafers in order to restore the crystal structure and to electrically activate the doping species. The annealing was performed with the second (532nm) and third (355nm) harmonic of a Nd:YAG laser at 4ns pulse duration. The epilayers were characterized by micro-Raman spectroscopy under surface and cross sectional backscattering. Changes in the phonon mode-intensity were related to the laser annealing induced recrystallization of the implanted material. The results were compared with changes in the infrared reflectivity across the Restsrahlen band.