Imaging performance of the EUV alpha demo tool at IMEC

摘要

Extreme Ultraviolet Lithography (EUVL) is the leading candidate beyond 32nm half-pitch device manufacturing.Having completed the installation of the ASML EUV full-field scanner, IMEC has a fully-integrated 300mmEUVL process line. Our current focus is on satisfying the specifications to produce real devices in our facilities.This paper reports on the imaging fingerprint of the EUV Alpha Demo Tool (ADT), detailing resolution, imaging,and overlay performance. Particular emphasis is given to small pitch contact holes, which are a critical layer foradvanced manufacturing nodes and one of the most likely layers where EUVL may take over from 193nmlithography. Imaging of contact holes, pattern transfer and successful printing of the contact hole level on a 32nmSRAM device is demonstrated. The impact of flare and shadowing on EUV ADT performance is characterizedexperimentally, enabling the implementation of appropriate mitigation strategies.