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Doping and Characterisation of Nanocrystalline Materials

机译:纳米晶体材料的掺杂和表征

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The synthesis behaviour and characterisation of nanocrystalline materials is presented. The materials synthesised are ZnO and InP doped with shallow donors and acceptors, respectively. Characterisation was performed with radioactive isotopes using the perturbed γγ angular correlation technique (PAC), thereby yielding local information on an atomic scale. The characterisation was supplemented by X-ray diffraction, transmission electron microscopy, UV/VIS absorption spectroscopy, photoluminescence spectroscopy, and extended X-ray absorption fine structure spectroscopy. It was shown that the successful incorporation of dopants in nanocrystalline ZnO and InP requires annealing at temperatures at which the growth of the nanocrystals in the sample becomes a significant process.
机译:介绍了纳米晶体材料的合成行为和表征。合成的材料分别是ZnO和InP分别掺杂有浅供体和受体。使用扰动γγ角相关技术(PAC)对放射性同位素进行表征,从而产生有关原子尺度的局部信息。通过X射线衍射,透射电子显微镜,UV / Vis吸收光谱,光致发光光谱和延伸的X射线吸收细结构光谱进行补充。结果表明,在纳米晶ZnO和InP中成功地掺入掺杂剂,在样品中纳米晶体生长变为重要过程的温度下需要退火。

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