Phosphorus doping on (001)-oriented diamond is introduced and compared with results achieved on (111) diamond. Detailed procedures, conditions, doping characteristics, and recent electrical properties of (001) phosphorus-doped diamond films are described. Now the highest mobility is reached to be ～780 cm~2/Vs at room temperature. The carrier compensation ratio, which is still high around 50-80 %, is the most important issues for (001) phosphorus-doped diamond to improve its electrical property. The origin of compensators in phosphorus-doped diamond is investigated, while yet to be identified.Ultraviolet light emitting diode with p-i-n junction structure is also introduced using (001) n-type diamond. A strong UV light emission at around ～240 nm is observed even at room temperature. High performance of diamond UV-LED is demonstrated.
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