Hydrogen Incorporation of Metal Gate HfO_2 MOS Structures on In_(0.2)Ga_(0.8)As Substrate with Si Interface Passivation Layer

摘要

Recently, we have investigated the GaAs MOSFKT and InGaAs MOS structure using Si interface passivation layer (IPL) and IlO_2 as gate dielectric. In this work, we have Investigated hydrogen incorporation effects for In_(0.2)Ga_(0.8)As MOSCAP using the same oxide of HfO_2 as gate insulator with Si IPL and U_2 annealing at 500°C for 30min. Excellent electrical characteristics with Low Wit (～2.8·10~(12)) with low frequency dispersion {< 0.1% and <10mV) has been obtained.