首页> 外国专利> PROCESS FOR LOCAL PASSIVATION OF A SUBSTRATE BY A HYDROGEN AMORPHOUS CARBON LAYER AND METHOD FOR MANUFACTURING THIN FILM TRANSISTORS ON THE PASSIVE SUBSTRATE.

PROCESS FOR LOCAL PASSIVATION OF A SUBSTRATE BY A HYDROGEN AMORPHOUS CARBON LAYER AND METHOD FOR MANUFACTURING THIN FILM TRANSISTORS ON THE PASSIVE SUBSTRATE.

机译:通过氢非晶碳层局部钝化基质的方法和在该被动基质上制造薄膜晶体管的方法。

摘要

The local passivation process consists in producing patterns (3) of photosensitive resin on the substrate (1), in subjecting the structure obtained to a radiofrequency plasma consisting essentially of hydrocarbon to thereby deposit a layer (6) of hydrogenated amorphous carbon on the structure and dissolving the patterns (3) of the resin in order to eliminate the amorphous carbon deposited on the resin, the amorphous carbon deposited on the substrate constituting said passivation.
机译:局部钝化过程在于在基板(1)上产生光敏树脂的图案(3),其中使获得的结构经受基本上由碳氢化合物组成的射频等离子体,从而在结构上沉积氢化非晶碳层(6),并且为了消除沉积在树脂上的非晶碳,溶解树脂的图案(3),沉积在基板上的非晶碳构成所述钝化。

著录项

  • 公开/公告号FR2675947A1

    专利类型

  • 公开/公告日1992-10-30

    原文格式PDF

  • 申请/专利权人 FRANCE TELECOM;

    申请/专利号FR19910004994

  • 发明设计人 YANNICK CHOUAN;CHOUAN YANNICK;

    申请日1991-04-23

  • 分类号C01B31/02;H01L21/205;H01L21/314;H01L21/336;H01L21/48;H01L23/14;H01L23/15;H01L29/78;H01L29/786;

  • 国家 FR

  • 入库时间 2022-08-22 05:24:35

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