首页> 外国专利> A method for the locally passivation of a substrate with an amorphous, hydrogen-containing carbon layer and a method for the production of thin film - transistors on this passivated substrate.

A method for the locally passivation of a substrate with an amorphous, hydrogen-containing carbon layer and a method for the production of thin film - transistors on this passivated substrate.

机译:一种具有无定形的含氢碳层的衬底的局部钝化的方法,以及在该钝化的衬底上制造薄膜晶体管的方法。

摘要

The process of the local passivation consists in producing the units (3) of photosensitive resin on the substrate (1), to subject the structure obtained with a radiofrequency plasma consisting essentially of hydrocarbons in order to deposit a layer (6) of hydrogenated amorphous carbon on the structure and to dissolve the units (3) of the resin in order to eliminate the amorphous carbon deposited on the resin, the amorphous carbon deposited on the substrate constituting the passivation.
机译:局部钝化的方法包括在基底(1)上制备光敏树脂的单元(3),以基本上由烃组成的射频等离子体对所得结构进行处理,以沉积氢化非晶碳层(6)。为了消除沉积在树脂上的非晶碳,在结构上溶解树脂的单元(3),沉积在基板上的非晶碳构成了钝化。

著录项

  • 公开/公告号DE69203144T2

    专利类型

  • 公开/公告日1996-02-15

    原文格式PDF

  • 申请/专利权人 FRANCE TELECOM FR;

    申请/专利号DE1992603144T

  • 发明设计人 CHOUAN YANNICK FR;

    申请日1992-04-22

  • 分类号H01L21/336;H01L23/29;H01L29/78;

  • 国家 DE

  • 入库时间 2022-08-22 03:41:18

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