Low-Cost, High-Performance Multifunction X-band Control MMICs Using Ion- Implanted FET Technology

摘要

To address increased performance requirements for X-band control circuits, a new switch FET, with a typical R_(on) of 1.6 Ω·mm for lower insertion loss, and a new gain FET, with high-drive capability and improved linearity, were developed and added to the suite of MSAG™ devices. These new MSAG FETs are fully compatible with other FETs in the MSAG suite. In this respect, MSAG stands alone with its demonstrated ability to combine the disparate functions required to produce a single-IC T/R control circuit, such as the one described herein, without sacrificing performance or reliability, and at affordable cost.