High-Temperature Electrical Characteristics of SPDT GaAs Switches with Copper Metallized Interconnects

摘要

Temperature-dependent electrical characteristics of a Copper metallized AlGaAs/InGaAs psedomophic high-electron-mobility transistor (PHEMT) Single-Pole-Double-Throw (SPDT) switches utilizing platinum (Pt, 70 nm) as the diffusion barrier is reported for the first time. The thermal threshold coefficients, defined as θV_(th)/θT, is of -0.25 mV/K from 300 to 500 K. The Cu metallized SPDT switches exhibited performance at the ambient of 380 K with insertion loss of less than 0.5 dB, isolation larger than 40 dB at 2.5 GHz. The copper metallized switches, with the excellent sub-threshold and high-temperature RF characteristics, shows good microwave performance and material stability for high temperature applications.