Study the Effects of the Doped-B Atom on Silicon Nanodot

摘要

Based on the first principles calculations, the effects of the doped-B atom on the electrical conductance of silicon nanodots device has been studied. The results show that the doped-B atom existing in the quantum dot will shift the peak of transmission coefficient and result in a small change of peak value. And thus it will deteriorate the electronic conductance for low bias voltage