insulated gate bipolar transistors; power bipolar transistors; silicon compounds; wide band gap semiconductors; BJT; IGBT; SiC; base current-saturation voltage; collector current; collector-emitter saturation voltages; emitter current gains; low-resistive ohmic con;
机译:高电压(<1kV)和高电流增益(32)4H-SiC功率BJT,使用无铝欧姆接触到基极
机译:新型4H-SiC BJT,利用基极中的浮动掩埋层实现高电流增益,高电流增益稳定性和高击穿电压
机译:从饱和导通状态快速关断高压4H-SiC npn BJT
机译:4H-SiC功率BJT中基极电流和饱和电压的分析
机译:开发基于物理的4H-SiC高压功率开关模型-MOSFET,IGBT和GTO。
机译:基于VO2的电气开关中的电压和电流激活的金属-绝缘体过渡:寿命分析
机译:4H-siC功率BJT具有高电流增益和低导通电阻