Silicon nitride films were deposited by radio frequency (r.f.) magnetron sputtering in an Ar-N2 gas mixture at a low substrate temperature. Subsequently the samples were annealed in pure N2 ambience. Influences of the Ar/N2 gas flow ratio as well as annealing on the optical properties and structure were studied. The optical properties of the films before annealing were examined using transmittance spectra. The composition of the samples was investigated by Fourier transform infrared (FTIR) spectra. Microstructure of the films was investigated using atomic force microscope (AFM). The films after annealing compared to former present a more compact construct, which is very dependent on the hydrogen concentration in the film.
展开▼
