OPTICAL AND ELECTRICAL PROPERTIES OF CHEMICAL BATH CO-DEPOSITED CdS-ZnS THIN FILMS

摘要

Cd1-xZnxS thin films have been co-deposited on glass slide substrates by the chemical bath deposition technique at 80 °C for 60 min. Crystal structure of the films was checked by XRD measurements. The SEM and AFM micrographs showed that the grain size decreased as the Zn content increased. Raman spectra of the Cd1-xZnxS films with low Zn content had two peaks. The presence of two energy gap values situated in low and high energy region was deduced from the optical transmission measurements. This could be interpreted in terms of the presence of mixed phases i.e. the pure CdS and CdZnS phases. The sheet resistance of the films was performed in darkness and under illumination with an ELH and UV lamps. The activation energy values obtained from the electrical resistivity measurements as a function of temperature ranging from 25 to 180 °C may be attributed to the barrier height of the grain boundaries of the films.