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Time-resolved Cavity Ringdown Spectroscopy as a Monitoring Technique of Nanoparticles in Pulsed VHF Plasmas

机译:时间分辨腔衰荡光谱作为脉冲VHF等离子体中纳米粒子的监测技术

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Time-resolved cavity ringdown (τ-CRD) spectroscopy has been applied to monitor the silyl (SiH_3) radicals and nano-particles in pulsed very high frequency (VHF) silane (SiH_4)/hydrogen (H_2) plasmas under microcrystalline silicon (μc-Si:H) deposition conditions. After the plasma ignition, a small constant cavity loss (~100 ppm) on timescales smaller than ~1 s has been observed, whereas on time scales larger than ~1 s after plasma ignition, an additional cavity loss is observed. By variation of the wavelength of the CRD laser pulse, we demonstrate that the cavity loss on time scales smaller than ~1 s reflects the SiH3 absorption. On time scales larger than ~1 s, the additional cavity loss corresponds to the loss of light due to mainly scattering at the nano-particles. Under the conditions studied, the light scattering at nanoparticles can be described by Rayleigh scattering during its initial growth. After ~2.5 s, the cavity loss reflects the transition of the scattering mechanism from dominant Rayleigh to dominant Mie-scattering. These results are discussed in terms of nano-particles growing in time and further confirmed by additional scanning electron microscopy analyses on the nano-particles created in the plasma pulse.
机译:时间分辨腔衰荡(τ-CRD)光谱已用于监测微晶硅(μc- Si:H)沉积条件。等离子点火后,在小于〜1 s的时间尺度上观察到较小的恒定腔损耗(〜100 ppm),而在等离子点火后大于〜1 s的时间尺度上,观察到额外的腔损耗。通过改变CRD激光脉冲的波长,我们证明在小于1 s的时间尺度上的腔损耗反映了SiH3的吸收。在大于〜1 s的时间尺度上,额外的腔损耗对应于光的损耗,这主要是由于在纳米粒子处的散射。在研究的条件下,纳米粒子处的光散射可以通过瑞利散射在其初始生长过程来描述。约2.5 s后,空洞损耗反映了散射机制从主要瑞利散射到主要Mie散射的转变。根据纳米粒子随时间的增长来讨论这些结果,并通过对在等离子脉冲中产生的纳米粒子的附加扫描电子显微镜分析进一步确认。

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