We describe the first experimental results of a light influence on the threshold voltage Vt in new ternary lead-free telluride compound (labeled as SA1). Reduction of Vt on about 35% in SA1 illuminated by Ar ion laser to compare dark Vt is discovered. More than 10,000 switching cycles without degradation have been recorded. Variation of the laser power allows achieving Vt reduction in SA1 down to 40% from the dark level. This is the largest change of Vt known for amorphous chalcogenides. It opens new horizons for chalcogenide functionally expanded phase change memory. Some ideas about the mechanism of the observed effect, related with the photo-generation of charge carriers and possible mechanisms of transition from OFF state to ON state, are discussed
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机译：我们描述了光对新型三元无铅碲化物（标记为SA1）中的阈值电压V t 的第一个实验结果。发现在氩离子激光照射下的SA1中V t 减少了约35％，以比较暗V t 。记录了超过10,000个不降级的开关周期。激光功率的变化可以使SA1的V t 降低，从暗水平降低到40％。这是无定形硫族化物已知的V 的最大变化。它为硫族化物功能扩展的相变存储器开辟了新的视野。讨论了与电荷载流子的光生有关的观察效应机理的一些想法，以及从OFF状态到ON状态转变的可能机理的一些想法。
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