High linearity performance of 0.13 /spl mu/m CMOS devices using field-plate technology

机译：采用场板技术的0.13 / spl mu / m CMOS器件的高线性度性能

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High linearity performance of 0.13 /spl mu/m CMOS devices using field-plate technology is presented in this paper. The field-plate technology functions for reducing the electric field between gate and drain terminals, which provides a field-plate induced

机译：本文提出了采用场板技术的0.13 / spl mu / m CMOS器件的高线性度性能。场板技术的作用是减少栅极和漏极端子之间的电场，从而提供感应的场板

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《Radio Frequency Integrated Circuits Symposium (RFIC), 2006 IEEE》|2006年|P.4|共1页
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Chien-Cheng Wei; Hsien-Chin Chiu; Wu-Shiung Feng;
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中图分类工业技术;
关键词
MOSFET; leakage currents; semiconductor device reliability; 0.13 micron; CMOS devices; NMOS devices; electric field reduction; field-plate technology; leakage current; radiofrequency integrated circuits; third-order intermodulation product;

机译：MOSFET;泄漏电流;半导体器件可靠性; 0.13微米; CMOS器件; NMOS器件;电场减小;场板技术;泄漏电流;射频集成电路;三阶互调产物;

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1. High-Linearity Performance of 0.13-$muhboxm$CMOS Devices Using Field-Plate Technology [J] . Wei C.-C., Chiu H.-C., Feng W.-S. IEEE Electron Device Letters . 2006,第期

机译：使用场板技术的0.13- $ muhboxm $ CMOS器件的高线性性能
2. The dependence of channel length on channel width in narrow-channel CMOS devices for 0.35-0.13 /spl mu/m technologies [J] . Hook T.B., Biesemans S. IEEE Electron Device Letters . 2000,第2期

机译：在0.35-0.13 / spl mu / m技术的窄通道CMOS器件中，通道长度对通道宽度的依赖性
3. Total ionizing dose effects on the noise performances of a 0.13 /spl mu/m CMOS technology [J] . Re V., Manghisoni M., Ratti L., IEEE Transactions on Nuclear Science . 2006,第3期

机译：总电离剂量对0.13 / spl mu / m CMOS技术的噪声性能的影响
4. High linearity performance of 0.13 /spl mu/m CMOS devices using field-plate technology [C] . Chien-Cheng Wei, Hsien-Chin Chiu, Wu-Shiung Feng Radio Frequency Integrated Circuits Symposium (RFIC), 2006 IEEE . 2006

机译：采用场板技术的0.13 / spl mu / m CMOS器件的高线性度性能
5. Bipolar device characterization and design in CMOS technologies for the design of high-performance low-cost BiCMOS analog integrated circuits [D] . Larsen, Frode. 1994

机译：CMOS技术中的双极性器件表征和设计，用于设计高性能低成本BiCMOS模拟集成电路
6. CMOS MEMS Fabrication Technologies and Devices [O] . Hongwei Qu 2016

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7. Impact of 24-GeV proton irradiation on 0.13-mu-m CMOS devices [O] . Gerardin, S 2006

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High linearity performance of 0.13 /spl mu/m CMOS devices using field-plate technology

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