Recent research results on deep level defects in semi-insulating InP-application to improve material quality

机译：半绝缘InP应用中深层缺陷改善材料质量的最新研究成果

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摘要

An apparent defect suppression effect has been observed in InP through an investigation of deep level defects in different semi-insulating (SI) InP materials. Quality improvement of SI-InP based on the defect suppression mechanism is presented.

机译：通过研究不同半绝缘（SI）InP材料中的深层缺陷，在InP中观察到了明显的缺陷抑制效果。提出了基于缺陷抑制机制的SI-InP质量改进方法。

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来源
《Indium Phosphide and Related Materials Conference Proceedings, 2006 International Conference on》|2006年|P.139-143|共5页
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作者
Youwen Zhao; Zhiyuan Dong; Hongwei Dong; Niefeng Sun; Tongnian Sun;
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中图分类工业技术;
关键词
III-V semiconductors; deep levels; indium compounds; vacancies (crystal); apparent defect suppression effect; deep level defects; material quality; quality improvement; semiinsulating InP materials; semiinsulating InP-application;

机译：III-V半导体;深能级;铟化合物;空位（晶体）;表观缺陷抑制效果;深能级缺陷;材料质量;质量改进;半绝缘InP材料;半绝缘InP应用;

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4. Recent research results on deep level defects in semi-insulating InP-application to improve material quality [C] . Youwen Zhao, Zhiyuan Dong, Hongwei Dong, International Conference on Indium Phosphide and Related Materials Conference Proceedings . 2006

机译：最近的研究导致半绝缘INP应用中的深度缺陷，以提高材料质量
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Recent research results on deep level defects in semi-insulating InP-application to improve material quality

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