GaInP₂ and GaAs solar cells grown on Si substrate

摘要

Large size Si substrates coated with a thin layer of singlecrystal Ge were used to grow GaAs and GaInP₂ solar cellsusing MOCVD. Preliminary evaluation indicated: (1) both GaAs and GaInP₂ were highly crystalline epi-layers; (2) quantum efficiencyof GaInP₂ cell on Si substrate can reach 94% of high qualityGaInP₂ on Ge substrate and that of GaAs cell on Si substratecan reach 83.4%; and (3) a 5000 thermal cycle test of temperature rangefrom +170° C to -100° C did not damage the solar cell. Theseresults showed that a properly prepared Ge layer on Si can relax strainand grow a high quality GaInP₂ and GaAs solar cell, with apractical efficiency for space application