A new power MOSFET model including the variation of parameters withthe temperature

摘要

A new PSpice model of power MOSFETs has been recently developedaiming to account for the parameter variations with temperature. Thepresent paper discusses the new model in detail and reports static anddynamic validation tests at different working temperatures in the range25-150° C on actual devices. Finally, the model is tested inapplications where the power devices are connected in parallel or inseries, in order to carry out specific information during criticalbehavior such as turn-on and turn-off transients