Temperature dependent subthreshold model of long channel GAA MOSFET including localized charges to study variations in its temperature sensitivity

摘要

In this paper, degrading effects of hot carrier damage/radiation damage/process damage induced interface localized charges on the temperature sensitivity of the Cylindrical Gate All Around (GAA) MOSFET are investigated. A temperature dependent numerical model is developed for GAA MOSFET including interface localized charges and the results so obtained are validated with the simulation results of ATLAS 3D device simulator. Results show that subthreshold region is the most affected region in both the cases i.e. (1) in presence of localized charges and (2) under temperature variation. Also degrading effects of localized charges are found to be more pronounced at low temperatures. Apart from electrical performance degradation, localized charges change the temperature sensitivity of the device i.e. change in temperature coefficient of the drain current and zero crossover point (gate bias corresponding to zero temperature coefficient).