Terahertz emission and absorption characteristics of silicon containing boron and phosphorous impurity dopants and the effect of temperature

机译：含硅硼和磷杂质掺杂剂的太赫兹发射和吸收特性以及温度的影响

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The emission and absorption characteristics of boron-doped and phosphorous-doped silicon at terahertz frequencies are investigated. Different doping concentrations are considered and individual terahertz optical transitions are identified. The effect of temperature is considered.

机译：研究了太赫兹频率下掺硼和掺磷硅的发射和吸收特性。考虑了不同的掺杂浓度，并确定了单独的太赫兹光学跃迁。考虑温度的影响。

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《Group IV Photonics, 2005. 2nd IEEE International Conference on》|2005年|P.13-16|共4页
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Matmon G.; Lynch S.A.; Townsend P.; Paul D.J.; Bain M.; Gamble H.S.; Jing Zhang; Ikonic Z.; Kelsall R.W.; Harrison P.;
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中图分类工业技术;
关键词
boron; electroluminescence; elemental semiconductors; impurities; infrared spectra; phosphorus; silicon; submillimetre wave spectra; thermo-optical effects; S:P; Si:B; absorption characteristics; boron-doped silicon; doping concentrations; impurity dopants; phosphorous;

机译：硼;电致发光;元素半导体;杂质;红外光谱;磷;硅;亚毫米波光谱;热光学效应; S：P; Si：B;吸收特性;掺杂硼的硅;掺杂浓度;杂质掺杂剂;磷;

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专利

1. Temperature dependence of terahertz optical transitions from boron and phosphorus dopant impurities in silicon [J] . S. A. Lynch, P. Townsend, G. Matmon, Applied Physics Letters . 2005,第10期

机译：硅中硼和磷掺杂杂质对太赫兹光学跃迁的温度依赖性
2. Quantifying boron and phosphorous dopant concentrations in silicon from photoluminescence spectroscopy at 79 K [J] . AnYao Liu, Hieu T. Nguyen, Daniel Macdonald Physica status solidi . 2016,第11期

机译：在79 K的光致发光光谱中定量分析硅中的硼和磷掺杂剂浓度
3. TEMPERATURE DEPENDENCE OF TERAHERTZ EMISSION FROM SILICON DEVICES DOPED WITH BORON [J] . R. T. Troeger, T. N. Adamf, S. K. Ray, International Journal of High Speed Electronics and Systems: Devices, Integrated Circuits and Systems, Optical and Quantum Electronics . 2004,第3期

机译：掺硼硅装置的TERAHERTZ辐射的温度依赖性。
4. Terahertz emission and absorption characteristics of silicon containing boron and phosphorous impurity dopants and the effect of temperature [C] . Matmon G., Lynch S.A., Townsend P., IEEE International Conference on Group IV Photonics . 2005

机译：含硼和磷杂质掺杂剂的硅和磷杂质掺杂剂的太赫兹排放和吸收特性及温度
5. FRACTURE BEHAVIOR OF BORON/ALUMINUM LAMINATES AT ROOM AND ELEVATED TEMPERATURES. (VOLUMES I AND II) (COMPOSITES, ACOUSTIC EMISSION, METAL-MATRIX, DEFORMATION CHARACTERISTICS, MECHANISTIC MODELING) [D] . MADHUKAR, MADHU SRIVASTAVA 1985

机译：室温和升高的温度下硼/铝层压板的断裂行为。（第一和第二册）（复合材料，声发射，金属基体，变形特性，力学建模）
6. Contactless nondestructive determination of dopant profiles of localized boron-diffused regions in silicon wafers at room temperature [O] . Hieu T. Nguyen, Zhuofeng Li, Young-Joon Han, -1

机译：室温下非接触式无损确定硅晶圆中局部硼扩散区的掺杂剂分布
7. Terahertz emission and absorption characteristics of silicon containing boron and phosphorous impurity dopants and the effect of temperature [O] . G. Matmon, S.A. Lynch, P. Townsend, -1

机译：含硼和磷杂质掺杂剂的硅和磷杂质掺杂剂的太赫兹排放和吸收特性及温度
8. The Theoretical and Experimental Study of the Temperature and Dopant Density Dependence of Hole Mobility, Effective Mass, and Resistivity in Boron-Doped Silicon [R] . Li, S. S. 1979

机译：硼掺杂硅中空穴迁移率，有效质量和电阻率的温度和掺杂浓度依赖性的理论和实验研究

Terahertz emission and absorption characteristics of silicon containing boron and phosphorous impurity dopants and the effect of temperature

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