On the dispersive versus arrhenius temperature activation of nbti time evolution in plasma nitrided gate oxides: measurements, theory, and implications

摘要

Negative bias temperature instability (NBTI) is studied in p-MOSFETs having decoupled plasma nitrided (DPN) gate oxides (EOT range of 12 Aring through 22Aring). Threshold voltage shift (DeltaV_T) is shown to be primarily due to interface trap generation (DeltaN_IT) and significant hole trapping (DeltaN_OT) has not been observed. DeltaV_T follows power-law time (t) dependence and Arrhenius temperature (T) activation