Apparatus and method for achieving a repeatable temperature versus time profile for a plasma-heated interaction portion used in mass-produced plasma processing

摘要

In a high density plasma (HDP) etching system, the temperature of the cleanser emissive kit portion is raised or approximated to the respective steady state equilibrium temperature so that the detergent chemistry characteristics and rate are substantially the same on the wafer-to-wafer basis. A relatively inactive humidification plasma is excited in the HDP chamber during the idle time period that occurs before or during the execution of a given plasma processing recipe to raise the temperature of the chamber interior kit portion.