ESD protection for pHEMT MMIC amplifiers

摘要

In this paper, we discuss ESD characterization data on typical circuit elements used in GaAs pHEMT MMIC amplifiers. At microwave and mm-wave frequencies, basic circuit performance considerations drive design decisions. Human body model (HBM) data for basic circuit elements can provide guidance for layout and topology trade-offs to improve ESD performance. Critical circuit elements include a) closely spaced conductors, b) FETs, and c) capacitors. Construction details and spacing affect ESD performance of passive conductors. Total FET gate width is the critical factor for FETs. Area and dielectric thickness are critical for capacitors. On-chip diode networks can provide practical protection for gate bias terminals, easily exceeding 2000 V HBM.