An SRAM weak cell fault model and a DFT technique with a programmable detection threshold

摘要

SRAM cell stability has become an important design and test issue owing to significant process spreads, non-ideal operational conditions, and subtle manufacturing defects in scaled-down geometries. In this article, we carry out an extensive SRAM SNM sensitivity analysis and propose an SRAM cell stability fault model for weak cell detection. This fault model is used to design and verify a proposed digitally programmable design-for-test (DFT) technique targeting the weak cell detection in embedded SRAMs (eSRAM).