Device stability of metamorphic InP/InGaAs heterojunction bipolar transistors by optical and electrical characterization

摘要

Optical and electrical characterizations such as photoluminescence (PL) and low frequency noise measurements have been performed on different MHBT structures before and after the device processing to understand the correlation between these parameters and the device performance. The structural stability of the MHBTs subjected to rapid thermal annealing (RTA) has also been investigated by PL. The experimental results indicate a good correlation between the optical and electrical characteristics.