Effects of forward bias conditions on electroluminescence efficiency in blue and green InGaN single-quantum-well diodes

摘要

The electroluminescence (EL) spectral intensity of super-bright blue and green InGaN single-quantum-well (SQW) LEDs is investigated over a wide temperature range (T=15-300 K) and as a function of wide injection current level (I=0.01-10 mA) to exploit what causes variations of the carrier capture efficiency. The effect of the forward driving voltage on the EL quenching at temperatures below 100 K on the diodes is studied.