Determination of charge carriers mobility in P-HgCdTe by magnetophotoconductivity method

摘要

The method of magnetophotoconductivity is based on measurement of the magnetic-field dependence of photoconductivity. The magnetic field is parallel to the light propagation and normal to sample surface. Magnetophotoconductivity in MBE p-HgCdTe/GaAs films was studied in temperature range 77-300 K. At low temperatures mobility of minor electrons can be easily determined. At high temperatures, the magnetophotoconductivity method can be applied to determination of major holes mobility. Accuracy of the offered method is also discussed.