Low-voltage, high-performance InAs/AlSb HEMTs with power gain above 100 GHz at 100 mV drain bias

摘要

Ultra-low power circuits require transistors with usable RF gain at low bias voltages and currents. In the present paper, we report 100 nm gate-length InAs/AlSb HEMTs with f/sub /spl tau// and f/sub max/ both exceeding 100 GHz at a mere 100 mV of drain bias. The devices also show excellent peak value for f/sub /spl tau// of 235 GHz and, to the best of our knowledge, a record f/sub max/ of 235 GHz at a higher drain bias of 300 mV.