high electron mobility transistors; ion implantation; ohmic contacts; contact resistance; silicon; elemental semiconductors; aluminium compounds; gallium compounds; III-V semiconductors; wide band gap semiconductors; ion implantation; unalloyed ohmic contacts; HEMT; as-deposited ohmic contact resistance; large periphery devices; manufacturability; access resistance; gate-source spacing; lateral dopant engineering; Si; AlGaN-GaN;
机译:离子注入降低活化退火温度的AlGaN / GaN HEMT中的非合金欧姆接触
机译:深亚微米AlGaN / GaN HEMT,具有离子注入的源/漏区和非合金欧姆接触
机译:具有非合金欧姆接触的离子注入式AlGaN-GaN HEMT
机译:对于AlGaN / GaN Hemts的非合金欧姆接触的离子植入
机译:GaN-SiC界面处具有GaN微坑的AlGaN / GaN HEMT中的散热分析
机译:AlGaN / GaN HEMT的优化Ti / Al / Ta / Au欧姆接触的电学表征和纳米级表面形貌
机译:用于AlGaN / GaN HEMT的优化Ti / Al / Ta / Au欧姆接触的电学表征和纳米级表面形貌