首页> 外文会议>Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International >A new plasma-enhanced co-polymerization (PCP) technology for reinforcing mechanical properties of organic silica low-k/Cu interconnects on 300 mm wafers
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A new plasma-enhanced co-polymerization (PCP) technology for reinforcing mechanical properties of organic silica low-k/Cu interconnects on 300 mm wafers

机译:一种新的等离子增强共聚(PCP)技术,用于增强300 mm晶圆上有机硅低k / Cu互连的机械性能

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A new plasma-enhanced co-polymerization (PCP) technology is developed for low-k/Cu damascene integration on 300 mm wafers. The concept of the PCP technology is to introduce monomers, which have different functions such as matrix formation, deposition acceleration, or reinforcement, into a reactor exited with a He-plasma. It is shown that the low-k film growth rate from the matrix monomer such as divinyl siloxane-benzocyclobutene (DVS-BCB) and the elastic modulus of the deposited films are enhanced by adding a deposition acceleration monomer and a reinforcement monomer, respectively, without increasing the k-value. Combining the PCP technology with an ultra-low-pressure CMP technique, the Cu damascene interconnects were successfully fabricated on 300 mm wafers.
机译:开发了一种新的等离子增强共聚(PCP)技术,用于在300 mm晶圆上进行低k / Cu镶嵌集成。 PCP技术的概念是将具有不同功能(例如基质形成,沉积加速或增强)的单体引入带有He-等离子体的反应器中。结果表明,通过分别添加沉积促进单体和增强单体,可以提高二乙烯基硅氧烷-苯并环丁烯(DVS-BCB)等基质单体的低k膜生长速率和沉积膜的弹性模量。增加k值。将PCP技术与超低压CMP技术相结合,成功地在300 mm晶圆上制造了铜镶嵌互连。

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