Step-based facet interactions in wet anisotropic etching

摘要

Recent experimental data has shown that a model of wet anisotropic etching of silicon must not be solely based on the crystal features presented to the etchant. The boundaries of under-etched facets, and step interaction at those boundaries, are also likely to play a role in determining etch rates. This work examines the behaviour of a particular configuration of steps, where both are composed of atoms having two dangling bonds, and where they intersect at an angle of 90/spl deg/, at a junction between two adjacent under etched facets.