首页> 外文会议>Integrated Circuits and Systems Design, 2003. SBCCI 2003. Proceedings. 16th Symposium on >On-chip decoupling capacitor optimization for noise and leakage reduction
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On-chip decoupling capacitor optimization for noise and leakage reduction

机译:片上去耦电容器的优化可降低噪声和泄漏

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摘要

On-chip decoupling capacitors are widely used in today's high-performance microprocessor design to mitigate the power supply noise problem. The continued reduction of oxide thickness in advanced nanotechnology, however, also significantly increases the tunneling current and leakage power of thin-oxide capacitors. This paper describes the modeling and simulation of a complete chip and package power supply distribution network, and the optimization of the placement of thin-oxide and thick-oxide capacitors to reduce the tunneling current, leakage power, and burn-in cost, while limiting the power supply noise within a noise margin.
机译:片上去耦电容器广泛用于当今的高性能微处理器设计中,以缓解电源噪声问题。然而,在先进的纳米技术中,氧化物厚度的持续减少也显着增加了薄氧化物电容器的隧穿电流和泄漏功率。本文描述了完整的芯片和封装电源分配网络的建模和仿真,以及薄氧化物和厚氧化物电容器的布局优化,以减少隧穿电流,泄漏功率和老化成本,同时限制了在噪声容限内的电源噪声。

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