HfSiON gate dielectric for CMOS applications

摘要

In this paper, we review our results on HfSiON deposited by MOCVD. Characteristics of capacitors and FETs fabricated by the conventional poly-Si gate CMOS process are discussed. We cover the issues of flatband voltage shift, effective inversion-layer mobility in relation to fabrication method of HfSiON, design consideration of HfSiON for 50 nm CMOSFETs and dielectric reliability.